THEORY OF QUASIPARTICLE SURFACE-STATES IN SEMICONDUCTOR SURFACES

[1] RELATIVISTIC NORM-CONSERVING PSEUDOPOTENTIALS [J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2103 - 2108

[2] BARAFF GA, 1981, DEFECTS RAD EFFECTS, P287

[3] BARAFF GA, COMMUNICATION

[4] GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (02) : 116 - 119

[5] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450

[6] SURFACE BAND DISPERSION OF GE(111)C(2X8) AND GE(111)-AS 1X1 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1380 - 1384

[7] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536

[8] SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1 [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2373 - 2380

[9] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569

[10] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1145 - 1147

[1] RELATIVISTIC NORM-CONSERVING PSEUDOPOTENTIALS [J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2103 - 2108

[2] BARAFF GA, 1981, DEFECTS RAD EFFECTS, P287

[3] BARAFF GA, COMMUNICATION

[4] GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (02) : 116 - 119

[5] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450

[6] SURFACE BAND DISPERSION OF GE(111)C(2X8) AND GE(111)-AS 1X1 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1380 - 1384

[7] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536

[8] SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1 [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2373 - 2380

[9] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569

[10] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1145 - 1147