Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer

被引：37

作者：

Seo, Kang-Ill ^{[1
]}

Lee, Dong-Ick

Pianetta, Piero

Kim, Hyoungsub

Saraswat, Krishna C.

McIntyre, Paul C.

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Synchrotron Radiat Lab, Stanford, CA 94305 USA

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2358834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the chemical bonding structure of the HfO2/Si (001) stack after the SiO2 interfacial layer (IL) is partially removed by a reactive titanium metal overlayer. Using synchrotron photoelectron spectroscopy, they found that ultrathin SiO2-like IL similar to 6.5 angstrom thick, which is significantly less than the initial SiO2 IL thickness of similar to 15 angstrom, exists at the HfO2/Si interface with an overlying Ti electrode. The dissociated Si from SiO2 IL is believed to go onto Si substrate where it regrows epitaxially. The interfacial trap density of the Ti-electrode sample was extracted to be similar to 1.6 x 10(11) eV(-1) cm(-2) near the midgap of Si, which was comparable to that of the control sample with W electrode. (c) 2006 American Institute of Physics.

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页数：3

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