Amphoteric doping of single-wall carbon-nanotube thin films as probed by optical absorption spectroscopy

被引：255

作者：

Kazaoui, S

Minami, N

Jacquemin, R

Kataura, H

Achiba, Y

机构：

[1] AIST, Agcy Ind Sci & Technol, Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

[2] Tokyo Metropolitan Univ, Fac Sci, Tokyo 1920397, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.60.13339

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have separately probed the doping behavior of semiconducting (S) and metallic (M) single-wall carbon-nanotube (SWNT) films, by optical absorption and de resistance (R) measurements. Either electron accepters (Br-2, I-2) or donors (K, Cs) were used as dopants with controlled stoichiometry. Disappearance of absorption bands at 0.68, 1.2, and 1.8 eV, and concomitant decrease of R by doping have been attributed to electron depletion from or filling to specific bands in S- or M-SWNT's, demonstrating their amphoteric doping behavior. Changes in the electronic properties are discussed in terms of the charge-transfer mechanism in the framework of the rigid-band model. [S0163-1829(99)02743-5].

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页码：13339 / 13342

页数：4

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