dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

被引：85

作者：

Aktsipetrov, OA ^{[1
]}

Fedyanin, AA ^{[1
]}

Mishina, ED ^{[1
]}

Rubtsov, AN ^{[1
]}

vanHasselt, CW ^{[1
]}

Devillers, MAC ^{[1
]}

Rasing, T ^{[1
]}

机构：

[1] UNIV NIJMEGEN, INST MAT RES, NL-6525 ED NIJMEGEN, NETHERLANDS

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.54.1825

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

The mechanism of dc-electric-field-induced second-harmonic generation (EISH) was studied at the buried Si(111)-SiO2 interface in transmission through a planar Si-SiO2-Cr MOS structure. The second-harmonic contribution of the field-induced quadratic polarization generated in the space-charge region is determined. The role of the spatial distribution of the de electric field inside the silicon space-charge region is demonstrated, as well as the influence of the oxide thickness. We have developed a phenomenological model of the EISH taking into account the interference between field-dependent and field-independent contributions to the nonlinear polarization (nonlinear interference) as well as the retardation of the EISH wave. We show that, due to these interference effects, the minima of the EISH curves do not coincide with the flatband voltage.

引用

页码：1825 / 1832

页数：8

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