Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

被引：74

作者：

Klopf, F ^{[1
]}

Deubert, S ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 02期

关键词：

D O I：

10.1063/1.1491612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using this model, the optimum cavity design for a given gain function can be determined. Following this approach, quantum-dot lasers with low wavelength shifts of 0.16 nm/K were realized, which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser. (C) 2002 American Institute of Physics.

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页码：217 / 219

页数：3

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