Improving lateral resolution of electrostatic force microscopy by multifrequency method under ambient conditions

被引:23
作者
Ding, X. D. [1 ,2 ,3 ,4 ]
An, J. [3 ,4 ]
Xu, J. B. [3 ,4 ]
Li, C. [1 ,2 ]
Zeng, R. Y. [1 ,2 ]
机构
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys Sci & Engn, Guangzhou 510275, Guangdong, Peoples R China
[3] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[4] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Shatin, Hong Kong, Peoples R China
关键词
eigenvalues and eigenfunctions; scanning probe microscopy; surface topography; CONTACT POTENTIAL DIFFERENCE; MODULATION-DETECTION; AMPLITUDE; SURFACES;
D O I
10.1063/1.3147198
中图分类号
O59 [应用物理学];
学科分类号
摘要
A multifrequency scanning probe technique which can enhance the spatial resolution of electrostatic force microscopy (EFM) in amplitude-modulation mode under ambient conditions is demonstrated. The first eigenmode of a cantilever is used for topographic imaging, while the second eigenmode is resonantly excited with a sinusoidal modulation voltage applied to the cantilever to measure electrostatic force in lift mode. Two-dimensional images and spectra of electrostatic force are obtained. The lateral resolution of the multifrequency EFM is demonstrated to be better than 15 nm and a theoretical explanation is postulated.
引用
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页数:3
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共 25 条
[1]   Nanoscale charging hysteresis measurement by multifrequency electrostatic force spectroscopy [J].
Bostanci, Umut ;
Abak, M. Kurtulus ;
Aktas, O. ;
Dana, A. .
APPLIED PHYSICS LETTERS, 2008, 92 (09)
[2]   Atomic scale kelvin probe force microscopy studies of the surface potential variations on the TiO2(110) surface [J].
Enevoldsen, G. H. ;
Glatzel, T. ;
Christensen, M. C. ;
Lauritsen, J. V. ;
Besenbacher, F. .
PHYSICAL REVIEW LETTERS, 2008, 100 (23)
[3]   Method to assess the grain crystallographic orientation with a submicronic spatial resolution using Kelvin probe force microscope [J].
Gaillard, Nicolas ;
Gros-Jean, Mickael ;
Mariolle, Denis ;
Bertin, Francois ;
Bsiesy, Ahmad .
APPLIED PHYSICS LETTERS, 2006, 89 (15)
[4]   Amplitude or frequency modulation-detection in Kelvin probe force microscopy [J].
Glatzel, T ;
Sadewasser, S ;
Lux-Steiner, MC .
APPLIED SURFACE SCIENCE, 2003, 210 (1-2) :84-89
[5]   2-DIMENSIONAL SURFACE DOPANT PROFILING IN SILICON USING SCANNING KELVIN PROBE MICROSCOPY [J].
HENNING, AK ;
HOCHWITZ, T ;
SLINKMAN, J ;
NEVER, J ;
HOFFMANN, S ;
KASZUBA, P ;
DAGHLIAN, C .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :1888-1896
[6]   Vacuum compatible high-sensitive Kelvin probe force microscopy [J].
Kikukawa, A ;
Hosaka, S ;
Imura, R .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (04) :1463-1467
[7]   Improving sensitivity in electrostatic force detection utilizing cantilever with tailored resonance modes [J].
Kimura, Kenjiro ;
Kobayashi, Kei ;
Matsushige, Kazumi ;
Yamada, Hirofumi .
APPLIED PHYSICS LETTERS, 2007, 90 (05)
[8]   High resolution imaging of contact potential difference using a novel ultrahigh vacuum non-contact atomic force microscope technique [J].
Kitamura, S ;
Suzuki, K ;
Iwatsuki, M .
APPLIED SURFACE SCIENCE, 1999, 140 (3-4) :265-270
[9]   High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope [J].
Kitamura, S ;
Iwatsuki, M .
APPLIED PHYSICS LETTERS, 1998, 72 (24) :3154-3156
[10]   Sensitivity and resolution in noncontact electrostatic force microscopy in the case of a constant potential -: art. no. 205419 [J].
Lévêque, G ;
Cadet, P ;
Arinero, R .
PHYSICAL REVIEW B, 2005, 71 (20)