Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaN/GaN high-electron-mobility transistors on 4 in. silicon

被引：23

作者：

Selvaraj, S. Lawrence ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nano Device & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

关键词：

D O I：

10.1063/1.2386919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high-electron-mobility transistors (HEMTs) on 4 in. Si were fabricated by inserting 3 nm of Al metal as a gate prior to the deposition of Pd/Ti/Au. The increase of drain current (I-DS max) density and decrease of extrinsic transconductance (g(m max)) have been observed in the Al-gated AlGaN/GaN HEMTs. The increase of I-D max is due to the increase of two-dimensional electron gas sheet carrier density, which was confirmed by capacitance-voltage (C-V) measurements. Moreover, the Al layer inserted-gate HEMT exhibited negative threshold voltage (V-th) shift. The Al and AlGaN interface shows Al-based oxide layer which was confirmed by Auger electron spectrum and x-ray photoelectron spectrum.

引用

页数：3

共 16 条

[1] Metal gate work function engineering using AlNx interfacial layers [J].

Alshareef, HN ;

Luan, HF ;

Choi, K ;

Harris, HR ;

Wen, HC ;

Quevedo-Lopez, MA ;

Majhi, P ;

Lee, BH .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[2] On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors [J].

Arulkumaran, S ;

Egawa, T ;

Selvaraj, L ;

Ishikawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L220-L223

[3] Enhancement of breakdown voltage by A1N buffer layer thickness in A1GaN/GaN high-electron-mobility transistors on 4 in. diameter silicon [J].

Arulkumaran, S ;

Egawa, T ;

Matsui, S ;

Ishikawa, H .

APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3

[4] Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H .

SOLID-STATE ELECTRONICS, 2005, 49 (10) :1632-1638

[5] Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (24-27) :L812-L815

[6] Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate [J].

Arulkumaran, S ;

Miyoshi, M ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) :497-499

[7] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistors [J].

Hashizume, T ;

Kotani, J ;

Basile, A ;

Kaneko, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7) :L111-L113

[8] Barrier thickness dependence of electrical properties and DC device characteristics of AlGaN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy [J].

Higashiwaki, M ;

Matsui, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (9A-B) :L1147-L1149

[9] Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid [J].

Ide, T ;

Shimizu, M ;

Suzuki, A ;

Shen, XQ ;

Okumura, H ;

Nemoto, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (08) :4785-4788

[10] Incorporation of oxygen donors in AlGaN [J].

Jang, HW ;

Baik, JM ;

Lee, MK ;

Shin, HJ ;

Lee, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (08) :G536-G540

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