Effect of polycrystallinity on the optical properties of highly oriented ZnO grown by pulsed laser deposition

被引:23
作者
McGlynn, E [1 ]
Fryar, J
Tobin, G
Roy, C
Henry, MO
Mosnier, JP
de Posada, E
Lunney, JG
机构
[1] Dublin City Univ, Sch Phys Sci, NCPST, Dublin 9, Ireland
[2] Univ Dublin Trinity Coll, Dept Pure & Appl Phys, Dublin 2, Ireland
关键词
pulsed laser deposition; zinc oxide; optical properties; annealing;
D O I
10.1016/j.tsf.2003.12.045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the results of photoluminescence and reflectance measurements on highly c-axis oriented polycrystalline ZnO grown by pulsed laser deposition. The samples measured were grown under identical conditions and were annealed in-situ at various temperatures for 10-15 min. The band-edge photoluminescence spectra of the material altered considerably with an increase in grain size, with increased free exciton emission and observable excitonic structure in the reflectance spectra. The green band emission also increased with increasing grain size. A deformation potential analysis of the effect of strain on the exciton energy positions of the A- and B-excitons demonstrated that the experimental exciton energies could not be explained solely in terms of sample strain. We propose that electric fields in the samples due to charge trapping at grain boundaries are responsible for the additional perturbation of the excitons. This interpretation is supported by theoretical estimates of the exciton energy perturbation due to electric fields. The behaviour of the green band in the samples provides additional evidence in favour of our model. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:330 / 335
页数:6
相关论文
共 22 条
[1]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[2]   WANNIER EXCITON IN AN ELECTRIC FIELD .2. ELECTROABSORPTION IN DIRECT-BAND-GAP SOLIDS [J].
BLOSSEY, DF .
PHYSICAL REVIEW B, 1971, 3 (04) :1382-&
[3]   ZnO as a novel photonic material for the UV region [J].
Chen, YF ;
Bagnall, D ;
Yao, TF .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3) :190-198
[4]   Pulsed laser deposition of ZnO and Mn-doped ZnO thin films [J].
de Posada, E ;
Tobin, G ;
McGlynn, E ;
Lunney, JG .
APPLIED SURFACE SCIENCE, 2003, 208 :589-593
[5]   Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers [J].
Gil, B ;
Lusson, A ;
Sallet, V ;
Said-Hassani, SA ;
Triboulet, R ;
Bigenwald, P .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (10B) :L1089-L1092
[6]   ELECTRONIC PROCESSES IN ZINC OXIDE [J].
HEILAND, G ;
MOLLWO, E ;
STOCKMANN, F .
SOLID STATE PHYSICS, 1959, 8 :191-323
[7]   POLARITON ABSORPTION LINES [J].
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW LETTERS, 1965, 15 (01) :22-&
[8]   Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition [J].
Jin, BJ ;
Im, S ;
Lee, SY .
THIN SOLID FILMS, 2000, 366 (1-2) :107-110
[9]   LUMINESCENCE OF ZNO UNDER HIGH ONE-QUANTUM AND 2-QUANTUM EXCITATION [J].
KLINGSHIRN, C .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :547-556
[10]  
LAGOIS J, 1981, PHYS REV B, V23, P5511, DOI 10.1103/PhysRevB.23.5511