Film properties of low-density and ultra-low-dielectric-constant material

被引：8

作者：

Muraguchi, R ^{[1
]}

Egami, M ^{[1
]}

Arao, H ^{[1
]}

Tounai, A ^{[1
]}

Nakashima, A ^{[1
]}

Komatsu, M ^{[1
]}

机构：

[1] Catalysts & Chem Ind Co Ltd, Kitakyushu, Fukuoka 8070027, Japan

来源：

LOW-DIELECTRIC CONSTANT MATERIALS V | 1999年 / 565卷

关键词：

D O I：

10.1557/PROC-565-63

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the effect of pore diameter on the film properties of low-density porous material with special interest in the pore diameter range below 5nm. A novel low-density material, Interpenetrated SOG (IPS), was designed to realize such porous character. It is composed of a pyrolic template, which is an organic olygomer, and framework, made from SOG polymer and silica sol, forming an interpenetrated structure. Thermal decomposition of the organic component successfully resulted in films with pore diameter range below 5nm. It is found that the dielectric constant and the pore diameter depended on the density and the film strength was affected by the average pore diameter. Practically, films with the average pore size below 5nm possessed dielectric constants as low as 2.2-2.0 and sufficient strength.

引用

页码：63 / 68

页数：6

共 10 条

[1] Porous silica xerogel processing and integration for ULSI applications [J].

Jin, CM ;

List, S ;

Zielinski, E .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :213-222

[2]

JULIUS F, 1998, MAT RES SOC P, V511, P69

[3] Experimental and theoretical study of structure-dielectric property relationships for polysilsesquioxanes [J].

Kim, SM ;

Yoon, DY ;

Nguyen, CV ;

Han, J ;

Jaffe, RL .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :39-47

[4]

NAKASHIMA R, 1998, P 4 INT DUMIC C FAB, P25

[5] Fabrication and characterization of spin-on silica xerogel films [J].

Nitta, S ;

Jain, A ;

Pisupatti, V ;

Gill, WN ;

Wayner, PC ;

Plawsky, JL .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :99-104

[6] Nanoporous silica for low K dielectrics [J].

Ramos, T ;

Rhoderick, K ;

Roth, R ;

Brungardt, L ;

Wallace, S ;

Drage, J ;

Dunne, J ;

Endisch, D ;

Katsanes, R ;

Viernes, N ;

Smith, DM .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :105-110

[7]

ROBERT F, 1998, MAT RES SOC P, V511, P33

[8]

*SEM IND ASS, 1997, NAT TECHN ROADM SEM

[9] Adhesion energy measurements of multilayer low-K dielectric materials for ULSI applications [J].

Shaffer, EO ;

Mills, ME ;

Hawn, D ;

Van Gestel, M ;

Knorr, A ;

Gundlach, H ;

Kumar, K ;

Kaloyeros, AE ;

Geer, RE .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :133-138

[10]

THOMAS W, 1998, MAT RES SOC P, V511, P259

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