Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures

被引：19

作者：

Ansaripour, G ^{[1
]}

Braithwaite, G ^{[1
]}

Myronov, M ^{[1
]}

Mironov, OA ^{[1
]}

Parker, EHC ^{[1
]}

Whall, TE ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.125963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the energy loss rate of hot holes as a function of carrier temperature T-C in p-type inverted modulation-doped (MD) Si/SiGe heterostructures over the carrier sheet density range (3.5-13) x 10(11) cm(-2), at lattice temperatures of 0.34 and 1.8 K. It is found that the energy loss rate (ELR) depends significantly upon the carrier sheet density, n(2D). Such an n(2D) dependence of ELR has not been observed previously in p-type SiGe MD structures. The extracted effective mass decreases as n(2D) increases, which is in agreement with recent measurements on a gated inverted sample. It is shown that the energy relaxation of the two-dimensional hole gases is dominated by unscreened acoustic phonon scattering and a deformation potential of 3.0 +/- 0.4 eV is deduced. (C) 2000 American Institute of Physics. [S0003-6951(00)02809-6].

引用

页码：1140 / 1142

页数：3

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