共 20 条
[1]
MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS
[J].
PHYSICAL REVIEW B,
1986, 33 (12)
:8291-8303
[2]
IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (10)
:L609-L611