MOBILITY TRANSITION IN THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALGAAS HETEROSTRUCTURES

被引:46
作者
LIN, BJF
TSUI, DC
WEIMANN, G
机构
[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
[2] DEUTSCH BUNDESPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
关键词
to increaseth ev alueo f E1 to at leastt wicet hecommonly usedv alueo f 7 eV. Howevera; s indicatedb y the dashed curve in Fig. 3(a); the calculateda usingE 1 = 14eV; without taking screeningin to accounti; s far abovet he experimentadl ata. Therefore; we conclude that a screeneda cousticp honons catteringw ith E1 ~ 14eV Acknowledgeme-n tWs e thankK .K. Choi; F. Sterna nd P. Price for discussionsA; C; GossardM; A. Paalanena nd W. Wiegmannfo r their importanct ontributiontso this work. The work at PrincetonU niversityi s supported by the National Science Foundation through grant numbeDr MR-8212167;
D O I
10.1016/0038-1098(85)91012-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
20
引用
收藏
页码:287 / 290
页数:4
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共 20 条
[2]   TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES [J].
CHAM, KM ;
WHEELER, RG .
PHYSICAL REVIEW LETTERS, 1980, 44 (22) :1472-1475
[3]   IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].
HESS, K .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486
[4]   IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611
[5]   ELECTRICAL TRANSPORT AND BAND-STRUCTURE OF GAAS [J].
LEE, HJ ;
BASINSKI, J ;
JURAVEL, LY ;
WOOLLEY, JC .
CANADIAN JOURNAL OF PHYSICS, 1979, 57 (02) :233-242
[6]   LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS [J].
LEE, K ;
SHUR, MS ;
DRUMMOND, TJ ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6432-6438
[7]   MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
LIN, BJF ;
TSUI, DC ;
PAALANEN, MA ;
GOSSARD, AC .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :695-697
[8]  
LIN BJF, 1985, THESIS PRINCETON U
[9]   TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].
MENDEZ, EE ;
PRICE, PJ ;
HEIBLUM, M .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :294-296
[10]   TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN GAAS-ALXGA1-XAS HETEROSTRUCTURES FROM 1 TO 10 K [J].
PAALANEN, MA ;
TSUI, DC ;
GOSSARD, AC ;
HWANG, JCM .
PHYSICAL REVIEW B, 1984, 29 (10) :6003-6004