TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES

被引：63

作者：

CHAM, KM

WHEELER, RG

机构：

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.44.1472

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1472 / 1475

页数：4

共 11 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[2]

CHAM KM, 1979, 3RD P INT C EL PROP

[3] ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].

EZAWA, H ;

KAWAJI, S ;

KURODA, T ;

NAKAMURA, K .

SURFACE SCIENCE, 1971, 24 (02) :659-&

[4] ELECTRONS AND SURFONS IN A SEMICONDUCTOR INVERSION LAYER [J].

EZAWA, H ;

KURODA, T ;

NAKAMURA, K .

SURFACE SCIENCE, 1971, 24 (02) :654-&

[5]

HARTSTEIN A, 1979, 3RD P INT C EL PROP

[6]

KAWAGUCHI Y, 1979, 3RD P INT C EL PROP

[7] MANY-BODY CORRECTIONS TO POLARIZABILITY OF 2-DIMENSIONAL ELECTRON-GAS [J].

MALDAGUE, PF .

SURFACE SCIENCE, 1978, 73 (01) :296-302

[8]

Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[10] CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS [J].

STERN, F .

PHYSICAL REVIEW LETTERS, 1980, 44 (22) :1469-1472

← 1 2 →