Four-wave EUV interference lithography

被引：32

作者：

Solak, HH ^{[1
]}

David, C

Gobrecht, J

Wang, L

Cerrina, F

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Univ Wisconsin, Ctr Nanotechnol, Madison, WI 53706 USA

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

holographic lithography; multiple beam; extreme ultraviolet; diffraction grating; undulator;

D O I：

10.1016/S0167-9317(02)00579-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a multiple beam Extreme Ultraviolet (EUV) interference lithography system to create two-dimensional periodic structures. A spatially coherent EUV beam from an undulator source is diffracted by several transmission gratings, which were written by electron beam lithography. Interference pattern due to the diffracted beams is recorded on a photoresist coated substrate. Square array of holes with a 141-nm periodicity were written in initial tests. In this paper, we discuss the potential of this technique for extremely high-resolution patterning and issues related to illumination coherence and polarization. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：77 / 82

页数：6

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