Predictive model for scanned probe oxidation kinetics

被引：99

作者：

Dagata, JA ^{[1
]}

Perez-Murano, F

Abadal, G

Morimoto, K

Inoue, T

Itoh, J

Yokoyama, H

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain

[3] Matsushita Elect Ind Co Ltd, Osaka, Japan

[4] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 19期

关键词：

D O I：

10.1063/1.126451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Previous descriptions of scanned probe oxidation kinetics involved implicit assumptions that one-dimensional, steady-state models apply for arbitrary values of applied voltage and pulse duration. These assumptions have led to inconsistent interpretations regarding the fundamental processes that contribute to control of oxide growth rate. We propose a model that includes a temporal crossover of the system from transient to steady-state growth and a spatial crossover from predominantly vertical to coupled lateral growth. The model provides an excellent fit of available experimental data. (C) 2000 American Institute of Physics. [S0003-6951(00)03119-3].

引用

页码：2710 / 2712

页数：3

共 28 条

[1] Combined laser and atomic force microscope lithography on aluminum: Mask fabrication for nanoelectromechanical systems [J].