DEVICE FABRICATION BY SCANNED PROBE OXIDATION

被引:137
作者
DAGATA, JA [1 ]
机构
[1] NATL INST STAND & TECHNOL, DIV PRECIS ENGN, GAITHERSBURG, MD 20899 USA
关键词
D O I
10.1126/science.270.5242.1625
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
[No abstract available]
引用
收藏
页码:1625 / 1626
页数:2
相关论文
共 25 条
[1]  
BINNIG G, 1982, HELV PHYS ACTA, V55, P726
[2]  
CAMPBELL PM, 1995, APPLIED PHYS LETT, V66, P1308
[3]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[4]   INTEGRATION OF SCANNING TUNNELING MICROSCOPE NANOLITHOGRAPHY AND ELECTRONICS DEVICE PROCESSING [J].
DAGATA, JA ;
TSENG, W ;
BENNETT, J ;
DOBISZ, EA ;
SCHNEIR, J ;
HARARY, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :2105-2113
[5]  
DAGATA JA, 1994, DEC IND APPL SCANN P
[6]  
DAGATA JA, 1995, NOV IND APPL SCANN P
[7]   SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE [J].
DAY, HC ;
ALLEE, DR .
APPLIED PHYSICS LETTERS, 1993, 62 (21) :2691-2693
[8]  
Drexler K. E., 1986, ENGINES OF CREATION
[9]   WRITING ELECTRONIC NANOMETER STRUCTURES INTO POROUS SI FILMS BY SCANNING-TUNNELING-MICROSCOPY [J].
ENACHESCU, M ;
HARTMANN, E ;
KOCH, F .
APPLIED PHYSICS LETTERS, 1994, 64 (17) :2253-2255
[10]   CONTROL OF CURRENT IN 2DEG CHANNEL BY OXIDE WIRE FORMED USING AFM [J].
ISHII, M ;
MATSUMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B) :1329-1331