INTEGRATION OF SCANNING TUNNELING MICROSCOPE NANOLITHOGRAPHY AND ELECTRONICS DEVICE PROCESSING

被引：42

作者：

DAGATA, JA ^{[1
]}

TSENG, W ^{[1
]}

BENNETT, J ^{[1
]}

DOBISZ, EA ^{[1
]}

SCHNEIR, J ^{[1
]}

HARARY, HH ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.577990

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The emerging field of nanoelectronics demands innovative methods to fabricate nanometer-scale structures. Such structures will play a critical role in the quantum-effect device physics of future highly integrated circuit architectures. An integrated approach to compound semiconductor nanostructure fabrication based on scanning tunneling microscope (STM) nanolithography, molecular-beam epitaxy, and reactive ion etching techniques is described. The critical elements of this approach, which have been demonstrated recently, are reviewed. Prospects for the coevolutionary development of nanoelectronics and STM-based fabrication and characterization are considered.

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页码：2105 / 2113

页数：9

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