Structural origin of bulk molecular hydrogen in hydrogenated amorphous silicon

被引：12

作者：

Liu, X ^{[1
]}

Pohl, RO ^{[1
]}

Crandall, RS ^{[1
]}

机构：

[1] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

来源：

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷

关键词：

D O I：

10.1557/PROC-557-323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The elastic anomaly observed previously at the triple point of bulk molecular hydrogen in hydrogenated amorphous silicon films prepared by hot-wire chemical-vapor deposition has also been observed in deuterated films at the triple point of D-2. The origin of this anomaly has now been traced to bubbles formed at the crystalline-amorphous interface. An upper limit of the pressure in these bubbles at their formation temperature, 440 degrees C, has been estimated to be 11 MPa, and is suggested to be a measure of the bonding strength between film and substrate at that temperature. Bubble formation after heat treatment at 400 degrees C has also been observed in films prepared by plasma-enhanced chemical-vapor deposition. The internal friction anomalies resemble those observed previously in cold-worked hydrogenated iron where they have been interpreted through plastic deformation of solid hydrogen in voids.

引用

页码：323 / 328

页数：6

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