A miniature pressure system with a capacitive sensor and a passive telemetry link for use in implantable applications

被引：73

作者：

Chatzandroulis, S ^{[1
]}

Tsoukalas, D

Neukomm, PA

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Microelect, Athens, Greece

[2] ETH Zentrum, CH-8092 Zurich, Switzerland

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2000年 / 9卷 / 01期

关键词：

blood-pressure measurements; passive telemetry; pressure sensors;

D O I：

10.1109/84.825772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A miniature telemetric pressure-measuring system is presented in this paper. The system uses passive telemetry to transfer power to the transponder and pressure data to the remote base unit. Such telemetric systems are becoming ever more important in the biomedical field as the interest for in-vivo measurements of different biological parameters both of humans and animals is increasing. A novel capacitive-type pressure sensor based on an SiGeB diaphragm is used as a sensing element. The merits of combining a capacitive pressure sensor and passive telemetry lies in the inherent low-power consumption of the sensor and the continuous availability of power through induction. The pressure sensor is connected to an integrated interface circuit. which includes a capacitance to frequency converter and an internal voltage regulator to suppress supply voltage fluctuations on the transponder side. In addition, the sensor and accompanying interface circuit take up very little space so as to be suitable for implantation. [480].

引用

页码：18 / 23

页数：6

共 10 条

[1]

BLACK JF, 1982, EXTENDED ABSTR ELECT, V82, P192

[2]

IMPLANTABLE BLOOD-PRESSURE TELEMETRY SYSTEM [J].

CASADEI, FW ;

BALDINGER, E ;

GEROLD, M .

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1972, BM19 (05) :334-+

[3]

CHAU HL, 1987, IEEE T ELECTRON DEV, V34, P850, DOI 10.1109/T-ED.1987.23006

[4]

Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding [J].

Goustouridis, D ;

Tsoukalas, D ;

Normand, P ;

Kontos, AG ;

Raptis, Y ;

Anastassakis, E .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :403-408

[5]

X-RAY-INVESTIGATION OF BORON-DOPED AND GERMANIUM-DOPED SILICON EPITAXIAL LAYERS [J].

HERZOG, HJ ;

CSEPREGI, L ;

SEIDEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2969-2974

[6]

Huang QT, 1998, IEEE J SOLID-ST CIRC, V33, P937, DOI 10.1109/4.701225

[7]

PASSIVE WIRELESS ACTUATOR CONTROL AND SENSOR SIGNAL TRANSMISSION [J].

NEUKOMM, PA ;

KUNDIG, H .

SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :258-262

[8]

SZE SM, 1984, VLSI TECHNOLOGY, P156

[9]

Tham Khong-Meng, 1995, IEEE J SOLID STATE C, V30

[10]

INVESTIGATION OF SILICON INTERSTITIAL REACTIONS WITH INSULATING FILMS USING THE SILICON-WAFER BONDING TECHNIQUE [J].

TSOUKALAS, D ;

TSAMIS, C ;

STOEMENOS, J .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3167-3169

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