Real time resistometric depth monitoring in the focused ion beam

被引：22

作者：

Latif, A ^{[1
]}

Booij, WE ^{[1
]}

Durrell, JH ^{[1
]}

Blamire, MG ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 02期

关键词：

Focused ion beam resistance measurement;

D O I：

10.1116/1.591273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed an in situ focused ion beam measurement technique, which has applications for the accurate, controlled, and reproducible removal of material for high aspect ratio nanometer scale cuts in tracks. This technique uses the resistance change of a track, as it is milled by ions, to monitor in real time the thickness and the end point. We have compared this technique with the thickness measurements by atomic force microscope for 1 mu m wide cuts. The technique has an accuracy of a few nanometers. (C) 2000 American Vacuum Society. [S0734-211X(00)02802-X].

引用

页码：761 / 764

页数：4

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