Low-temperature crystallization of sol-gel-derived Pb(Zr, Ti)O3 thin films

被引：24

作者：

Fujimori, Y ^{[1
]}

Nakamura, T ^{[1
]}

Takasu, H ^{[1
]}

机构：

[1] ROHM Co Ltd, Semicond R&D Headquarters, Device Technol Div, Ukyo Ku, Kyoto 6158585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9B期

关键词：

ferroelectric thin film; sol-gel; PZT; low temperature; low-pressure; two-step annealing;

D O I：

10.1143/JJAP.38.5346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sol-gel derived Pb(Zr,Ti)O-3 capacitors were prepared by low-pressure annealing and the two-step annealing techniques. Well-saturated D-E hysteresis was obtained at 650 degrees C with low-pressure rapid thermal annealing. The low-pressure first anneal lowered the crystallization temperature of sol-gel-derived Pb(Zr,Ti)O-3 thin films. Highly reliable and low-voltage operation Pb(Zr,Ti)O-3 capacitors were obtained using a two-step annealing techniques under low-pressure at 550 degrees C.

引用

页码：5346 / 5349

页数：4

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