Retention characteristics of a ferroelectric memory based on SrBi2(Ta,Nb)(2)O-9

被引：26

作者：

Shimada, Y ^{[1
]}

Azuma, M ^{[1
]}

Nakao, K ^{[1
]}

Chaya, S ^{[1
]}

Moriwaki, N ^{[1
]}

Otsuki, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT CORP,ULSI PROC TECHNOL DEV CTR,KYOTO 601,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 9B期

关键词：

ferroelectric memory; retention; bismuth-layered perovskite; SrBi2(Ta; Nb)(2)O-9;

D O I：

10.1143/JJAP.36.5912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarization decay process in SrBi2(Ta, Nb)(2)O-9 capacitors and retention characteristics of a 288-bit ferroelectric memory device fabricated from SrBi2(Ta, Nb)(2)O-9 were studied. The remanent polarization decay at room temperature showed good linearity when plotted against logarithmic retention time over a wide range of 10(-3)-10(5) s. The distribution of times to failure of a 288-bit memory was fit to a model having a linear relationship between log(log t(f)) and 1/T for the period of infant failures and to the Arrhenius model having the form log t(f) vs 1/T for the period of random failures, where t(f) is the time to failure and T is the temperature. The activation energy was found to be 0.35 eV for infant failures and 1.15 eV for random failures. Possible causes for the difference in activation energies are discussed.

引用

页码：5912 / 5916

页数：5

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