Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors

被引:37
作者
Chichibu, SF
Sugiyama, M
Ohbasami, M
Hayakawa, A
Mizutani, T
Nakanishi, H
Negami, T
Wada, T
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Sci Univ Tokyo, Dept Elect Engn, Noda, Chiba 2788510, Japan
[3] Matsushita Elect Ind Co Ltd, Living Environm Dev Ctr, Kyoto 6190237, Japan
[4] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan
关键词
crystal structure; physical vapor deposition processes; polycrystalline deposition; semiconducting ternary compounds; solar cells;
D O I
10.1016/S0022-0248(02)01558-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Diethylselenide [(C2H5)(2)Se: DESe] was shown to be a promising less-hazardous alternative source for the preparation of CuInSe2 films for solar cell applications by the selenization of Cu-In and Cu-In-O precursors. Approximately 1.5 mum thick, single-phase, polycrystalline CuInSe2 films having grain size of approximately 1-2 mum were formed on Mo-coated soda-lime glass substrates at temperatures between 450degrees and 550degreesC. Slightly In-rich films exhibited a distinct contribution by excitonic absorption in the absorption spectra at 90 K. Photoluminescence spectra at low temperatures were dominated by characteristic bands at 0.97 and 0.90 eV, showing that the films are a suitable material for the photo-absorbing layer of CuInSe2-based solar cells. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:404 / 409
页数:6
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