Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy

被引：33

作者：

Chichibu, S

机构：

[1] Faculty of Science and Technology, Science University of Tokyo, Noda, Chiba 278

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 14期

关键词：

D O I：

10.1063/1.118708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High purity CuInSe2 heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix. (C) 1997 American Institute of Physics.

引用

页码：1840 / 1842

页数：3

共 19 条

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