HETEROEPITAXY AND CHARACTERIZATION OF CUINSE2 ON GAAS(001)

被引：61

作者：

NIKI, S

MAKITA, Y

YAMADA, A

HELLMAN, O

FONS, PJ

OBARA, A

OKADA, Y

SHIODA, R

OYANAGI, H

KURAFUJI, T

CHICHIBU, S

NAKANISHI, H

机构：

[1] MINIST INT TRADE & IND,ELECTROTECH LAB,DIV PHYS SCI,TSUKUBA,IBARAKI 305,JAPAN

[2] SCI UNIV TOKYO,NODA,CHIBA 278,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80129-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CuInSe2 (CIS) films with Cu/In ratios of gamma = 0.81-1.81 have been grown on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of T-s = 350-550 degrees C. Film properties were found to be substantially different for Cu- and In-rich regions. Cu-rich films were p-type, and streaky reflection high-energy electron diffraction (RHEED) patterns and sharp photoluminescence (PL) emissions were observed, suggesting high quality epitaxial films. In-rich films were highly resistive, and contained a large number of twins formed on {112} planes. A broad and strong PL emission, a donor-acceptor pair emission, was observed, which blue-shifted with increasing excitation power, indicating heavy compensation.

引用

页码：1201 / 1205

页数：5

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