SHARP OPTICAL-EMISSION FROM CUINSE2 THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引:19
作者
NIKI, S
MAKITA, Y
YAMADA, A
OBARA, A
MISAWA, S
IGARASHI, O
AOKI, K
KUTSUWADA, N
机构
[1] ULVAC JAPAN LTD,TSUKUBA RES LAB,TSUKUBA,IBARAKI 30526,JAPAN
[2] NIPPON INST TECHNOL,MIYASHIRO,SAITAMA 345,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 4A期
关键词
CHALCOPYRITE SEMICONDUCTOR; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; INTRINSIC DEFECTS;
D O I
10.1143/JJAP.33.L500
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical properties Of CuInSe2 (CIS) films grown on (001) GaAs by molecular beam epitaxy (MBE) have been investigated by means of low temperature photoluminescence (PL) spectroscopy. Distinct emission fines including a bandedge emission were observed reproducibly from Cu-rich films, indicating high crystalline quality. Such well-defined PL spectra have made possible the extensive characterization of radiative recombination processes through the intrinsic defects in this material; some of the emission lines were attributed to phonon replicas with a phonon energy of 28-29 meV for the first time. PL spectra were found to be very sensitive to the MBE growth parameters such as substrate temperature, suggesting dominant defects in CIS epitaxial films can be controlled by varying the growth conditions.
引用
收藏
页码:L500 / L502
页数:3
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