High field transport in semi-insulating GaAs: A promising material solid-state detectors

被引：18

作者：

Mares, JJ ^{[1
]}

Kristofik, J ^{[1
]}

Hubik, P ^{[1
]}

Jurek, K ^{[1
]}

Pospisil, S ^{[1
]}

Kubasta, J ^{[1
]}

机构：

[1] CZECH TECH UNIV, FAC NUCL SCI & PHYS ENGN, CR-11519 PRAGUE 1, CZECH REPUBLIC

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.365648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semi-insulating GaAs detector structures have been studied by transport [current-voltage (I-V) curves] and scanning electron microscope voltage (potential) contrast methods, The saturated part of I-V curves, suitable for radiation detection, is due to the velocity controlled high field transport mechanism while the sharp increase of current with voltage is ascribed to the impact ionization. It is shown that a modified voltage contrast method is able to reveal the actual potential distribution and to contribute to the optimization of the radiation detector structures. (C) 1997 American Institute of Physics.

引用

页码：3358 / 3362

页数：5