In-situ formation of a copper silicide cap for TDDB and electromigration improvement

被引：12

作者：

Chattopadhyay, K. ^{[1
]}

van Schravendijk, B. ^{[1
]}

Mountsier, T. W. ^{[1
]}

Alers, G. B. ^{[1
]}

Hornbeck, M. ^{[1
]}

Wu, H. J. ^{[1
]}

Shaviv, R. ^{[1
]}

Harm, G. ^{[1
]}

Vitkavage, D. ^{[1
]}

Apen, E. ^{[1
]}

Yu, Y. ^{[1
]}

Havemann, R. ^{[1
]}

机构：

[1] Novellus Syst, San Jose, CA 95134 USA

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

D O I：

10.1109/RELPHY.2006.251203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-aligned barrier processes are being investigated as an alternative to standard dielectric barrier processes for the 65 nm technology nodes and beyond. Variations in the dielectric barrier process can modulate the copper-dielectric interface and the SiC / low k interface to improve dielectric and electromigration reliability. For the first time, in this paper, we will show that optimization of both the self aligned barrier and the SiC film can improve the adhesion between both the Cu and the dielectric layer on top, resulting in a 10-1000x increase in time-dependent dielectric breakdown lifetime.

引用

页码：128 / +

页数：2

共 10 条

[1] Interlevel dielectric failures in copper/low-k structures [J].

Alers, GB ;

Jow, K ;

Shaviv, R ;

Kooi, G ;

Ray, GW .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (02) :148-152

[2] Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects [J].

Chhun, S ;

Gosset, LG ;

Casanova, N ;

Guillaumond, JF ;

Dumont-Girard, P ;

Federspiel, X ;

Pantel, R ;

Arnal, V ;

Arnaud, L ;

Torres, J .

MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) :106-112

[3]

GOSSET LG, 2003, ADV MET C

[4] Reduced electromigration of Cu wires by surface coating [J].

Hu, CK ;

Gignac, L ;

Rosenberg, R ;

Liniger, E ;

Rubino, J ;

Sambucetti, C ;

Domenicucci, A ;

Chen, X ;

Stamper, AK .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1782-1784

[5]

HU CK, 2001, APPL PHYS LETT

[6]

HU CK, 2001, IEEE INT INT C

[7] Relationship between interfacial adhesion and electromigration in Cu metallization [J].

Lane, MW ;

Liniger, EG ;

Lloyd, JR .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1417-1421

[8] Impact of low-K dielectrics and barrier metals on TDDB lifetime of Cu interconnects [J].

Noguchi, J ;

Saito, T ;

Ohashi, N ;

Ashihara, H ;

Maruyama, H ;

Kubo, M ;

Yamaguchi, H ;

Ryuzaki, D ;

Takeda, K ;

Hinode, K .

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :355-359

[9] Optimizing the precision of the four-point bend test for the measurement of thin film adhesion [J].

Shaviv, R ;

Roham, S ;

Woytowitz, P .

MICROELECTRONIC ENGINEERING, 2005, 82 (02) :99-112

[10] Comparison of via/line package level vs. wafer level results [J].

Tibel, D ;

Sullivan, TD .

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :194-199

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