Reduced electromigration of Cu wires by surface coating

被引：215

作者：

Hu, CK ^{[1
]}

Gignac, L

Rosenberg, R

Liniger, E

Rubino, J

Sambucetti, C

Domenicucci, A

Chen, X

Stamper, AK

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Microelect Div, Hopewell Jct, NY 12533 USA

[3] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1504491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. (C) 2002 American Institute of Physics.

引用

页码：1782 / 1784

页数：3

共 11 条

[1] Optimizing the electromigration performance of copper interconnects [J].

Besser, P ;

Marathe, A ;

Zhao, L ;

Herrick, M ;

Capasso, C ;

Kawasaki, H .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :119-122

[2]

Diamand Y. S., 2000, P ELECTROCHEM SOC, V99-34, P102

[3] A high performance liner for copper Damascene interconnects [J].

Edelstein, D ;

Uzoh, C ;

Cabral, C ;

DeHaven, P ;

Buchwalter, P ;

Simon, A ;

Cooney, E ;

Malhotra, S ;

Klaus, D ;

Rathore, H ;

Agarwala, B ;

Nguyen, D .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :9-11

[4] Electromigration in Cu interconnects with very different grain structures [J].

Hau-Riege, CS ;

Thompson, CV .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3451-3453

[5]

HU C, 1990, P IEEE, V78, P267

[6] Electromigration path in Cu thin-film lines [J].

Hu, CK ;

Rosenberg, R ;

Lee, KY .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2945-2947

[7]

HU CK, 1997, ELECTROCHEM SOC, V97, P1514

[8]

HU CK, Patent No. 6342733

[9] Texture control and electromigration performance in Al-based and Cu-based layered interconnects [J].

Kageyama, M ;

Abe, K ;

Harada, Y ;

Onoda, H .

ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS, 1998, 514 :91-102

[10]

LOPATIN S, 1977, P 2 INT S LOW HIGH D, P186

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