Direct determination of multiple adsorption sites using chemical-shift photoelectron diffraction: Sb/GaAs(110)

被引：14

作者：

Ascolani, H

Avila, J

Franco, N

Asensio, MC

机构：

[1] COMIS NACL ENERGIA ATOM,INST BALSEIRO,RA-8400 SAN CARLOS BARILO,RIO NEGRO,ARGENTINA

[2] CSIC,INST CIENCIAS MAT MADRID,CANTO BLANCO 28049,MADRID,SPAIN

[3] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.78.2604

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A direct inversion of experimental energy-dependent photoelectron diffraction data has been used to determine the structure of two inequivalent adsorption sites of Sb at the GaAs(110)-p(1 x 1)Sb surface. Scanned-energy distributions for each of the two chemically shifted components of the Sb-4d core level were measured and the reconstruction of these data yields to three-dimensional images of the nearby atoms. Our results show that the atomic geometry of the Sh overlayer contradicts various models proposed for this surface and are consistent only with the epitaxial continued layer structure.

引用

页码：2604 / 2607

页数：4

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