X-RAY STANDING-WAVE STUDY OF MONOLAYERS OF SB ON GAAS(110)

被引：36

作者：

KENDELEWICZ, T

WOICIK, JC

MIYANO, KE

HERRERAGOMEZ, A

COWAN, PL

KARLIN, BA

BOULDIN, CE

PIANETTA, P

SPICER, WE

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

[2] ARGONNE NATL LAB,DIV PHYS,ARGONNE,IL 60439

[3] BROOKHAVEN NATL LAB,NATL SYNCHROTRON LIGHT SOURCE,UPTON,NY 11973

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.7276

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The x-ray standing-wave technique has been used to determine the geometrical structure of Sb on GaAs(110). Using the back reflection diffraction geometry from (220) and (400) planes, we find the average vertical distance of Sb atoms from the GaAs surface to be 2.27 +/-0.05 angstrom in agreement with theoretical calculations for the epitaxial continued layer structure. Other models of buckled zigzag chains are found inconsistent with our results. Additionally, our data indicate less than 10% disorder in the Sb overlayer.

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页码：7276 / 7279

页数：4

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