OBSERVATION OF INTERFACE PHONONS BY LIGHT-SCATTERING FROM EPITAXIAL SB MONOLAYERS ON III-V SEMICONDUCTORS

被引：71

作者：

HUNERMANN, M ^{[1
]}

GEURTS, J ^{[1
]}

RICHTER, W ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.66.640

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Vibrations of Sb on (110) surfaces of III-V semiconductors (InP, GaAs, GaP) were investigated by Raman scattering from the submonolayer range up to a few monolayers. Interface phonons, involving the epitaxial first monolayer of Sb and the upper substrate layer, are observed. They are clearly identified by their coverage dependence. The peaks are most pronounced for Sb on InP. They fulfill the polarization selection rules for Sb chains along (11BAR0). Moreover, they reveal that for thicker Sb coverages the epitaxial structure of the first Sb monolayer remains intact.

引用

页码：640 / 643

页数：4

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