AUGER STUDIES OF TEMPERATURE EFFECT ON THE INP-AG INTERFACE - CONTRIBUTION OF A THIN SB INTERLAYER

被引：6

作者：

DUMAS, M

BENBRAHIM, A

BENKACEM, M

LASSABATERE, L

机构：

来源：

SURFACE SCIENCE | 1989年 / 211卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(89)90831-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：698 / 706

页数：9

相关论文

共 14 条

[1] PROPERTIES OF 100-K INP(110) CLEAVED SURFACE AND RELEVANT SCHOTTKY DIODES
BENBRAHIM, A
ISMAIL, A
DUMAS, M
LASSABATERE, L
[J]. SURFACE SCIENCE, 1986, 178 (1-3) : 158 - 163
[2] CHU SNG, 1983, SOLID STATE SCI TECH, P2393
[3] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[4] DUMAS M, 1988, VIDE COUCHES MINCES, V241, P241
[5] ELMAATI EC, 1985, THESIS MONTPELLIER
[6] EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR
GARNER, CM
SU, CY
SAPERSTEIN, WA
JEW, KG
LEE, CS
PEARSON, GL
SPICER, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3376 - 3382
[7] Ghandi S.K., 1983, VLSI FABRICATION PRI
[8] ISMAIL A, 1986, VACUUM, P217
[9] FORMATION AND PROPERTIES OF (AU, AL, AG, IN) (INP-GAAS) SCHOTTKY DIODES - CONTRIBUTION OF THE SEMICONDUCTOR SURFACE TO THE DIODE CHARACTERISTICS
LASSABATERE, L
ISMAIL, A
PALAU, JM
BENBRAHIM, A
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 336 - 346
[10] LI K, 1984, ICPS SAN FRANCISCO