PROPERTIES OF 100-K INP(110) CLEAVED SURFACE AND RELEVANT SCHOTTKY DIODES

被引：3

作者：

BENBRAHIM, A

ISMAIL, A

DUMAS, M

LASSABATERE, L

机构：

来源：

SURFACE SCIENCE | 1986年 / 178卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90291-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：158 / 163

页数：6

共 11 条

[1] GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE [J].

BONAPACE, CR ;

LI, K ;

KAHN, A .

JOURNAL DE PHYSIQUE, 1984, 45 (NC-5) :409-418

[2] A STUDY OF THE CLEAVED INP SURFACE BY CPD AND SPV TOPOGRAPHIES [J].

ISMAIL, A ;

BENBRAHIM, A ;

PALAU, JM ;

LASSABATERE, L .

SURFACE SCIENCE, 1985, 164 (01) :43-54

[3] A STUDY OF THE ELECTRONIC-PROPERTIES OF CLEAVED INP SURFACES INDUCED BY OXYGEN EXPOSURE [J].

ISMAIL, A ;

BENBRAHIM, A ;

LASSABATERE, L ;

LINDAU, I .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :485-487

[4] COMPARISON BETWEEN GAAS(110) AND INP(110) SURFACE-PROPERTIES INDUCED BY CLEAVAGE DEFECTS AND BY OXYGEN-ADSORPTION [J].

ISMAIL, A ;

BENBRAHIM, A ;

PALAU, JM ;

LASSABATERE, L .

SURFACE SCIENCE, 1985, 162 (1-3) :195-201

[5] METAL INP INTERFACE AND SCHOTTKY DIODE FORMATION [J].

ISMAIL, A ;

PALAU, JM ;

LASSABATERE, L .

REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (03) :205-214

[6] ABOUT THE FERMI LEVEL PINNING AT III-V COMPOUNDS SURFACE [J].

ISMAIL, A ;

PALAU, JM ;

LASSABATERE, L .

JOURNAL DE PHYSIQUE, 1984, 45 (10) :1717-1723

[7]

ISMAIL A, 1986, VACUUM

[8]

KAHN A, 1983, J VACUUM SCI TECHNOL, V1, P612

[9]

LI K, UNPUB J VACUUM SCI T

[10] DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS [J].

SPICER, WE ;

EGLASH, S ;

LINDAU, I ;

SU, CY ;

SKEATH, PR .

THIN SOLID FILMS, 1982, 89 (04) :447-460

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