METAL INP INTERFACE AND SCHOTTKY DIODE FORMATION

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387

[2] PHOTOEMISSION-STUDIES OF THE AU-INP(110) INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 762 - 765

[3] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[4] METALLIC INTERFACES .2. INFLUENCE OF EXCHANGE-CORRELATION AND LATTICE POTENTIALS [J]. PHYSICAL REVIEW, 1967, 162 (03): : 578 - +

[5] BETHE HA, 1942, MIT4312 RAD LAB REP

[6] ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16): : 3639 - 3648

[7] MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 880 - 885

[8] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786

[9] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666

[10] ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS [J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6204 - 6215

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387

[2] PHOTOEMISSION-STUDIES OF THE AU-INP(110) INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 762 - 765

[3] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[4] METALLIC INTERFACES .2. INFLUENCE OF EXCHANGE-CORRELATION AND LATTICE POTENTIALS [J]. PHYSICAL REVIEW, 1967, 162 (03): : 578 - +

[5] BETHE HA, 1942, MIT4312 RAD LAB REP

[6] ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16): : 3639 - 3648

[7] MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 880 - 885

[8] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786

[9] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666

[10] ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS [J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6204 - 6215