A STUDY OF THE CLEAVED INP SURFACE BY CPD AND SPV TOPOGRAPHIES

被引：18

作者：

ISMAIL, A

BENBRAHIM, A

PALAU, JM

LASSABATERE, L

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(85)90699-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：43 / 54

页数：12

共 22 条

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[3] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
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[4] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
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[6] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES
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[7] DOW JD, 1982, J VACUUM SCI TECHNOL, V20, P65
[8] ABOUT THE FERMI LEVEL PINNING AT III-V COMPOUNDS SURFACE
ISMAIL, A
PALAU, JM
LASSABATERE, L
[J]. JOURNAL DE PHYSIQUE, 1984, 45 (10): : 1717 - 1723
[9] STRUCTURE OF THE AL-GAP(110) AND AL-INP(110)INTERFACES
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DUKE, CB
PATON, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 613 - 617
[10] KENDELEWICZ T, 1983, PHYS REV B, V27, P3368