STRUCTURE OF THE AL-GAP(110) AND AL-INP(110)INTERFACES

被引：43

作者：

KAHN, A ^{[1
]}

BONAPACE, CR ^{[1
]}

DUKE, CB ^{[1
]}

PATON, A ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,ROCHESTER,NY 14644

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：613 / 617

页数：5

共 20 条

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[7] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110)
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[9] DUKE CB, PHYS REV B
[10] ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS
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CARELLI, J
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 331 - 334