A STUDY OF THE ELECTRONIC-PROPERTIES OF CLEAVED INP SURFACES INDUCED BY OXYGEN EXPOSURE

被引：9

作者：

ISMAIL, A ^{[1
]}

BENBRAHIM, A ^{[1
]}

LASSABATERE, L ^{[1
]}

LINDAU, I ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

CONDUCTION BANDS - FERMI LEVEL - INDIUM PHOSPHIDES - PINNING - SURFACE STATES;

D O I：

10.1063/1.336657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：485 / 487

页数：3

共 9 条

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[2]

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[3] OXYGEN AND TEMPERATURE INDUCED MODIFICATION ON GAAS CLEAVED SURFACES AND GAAS METAL SCHOTTKY DIODES [J].

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[4]

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[5]

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[7] SURFACE ELECTRONIC-STRUCTURE OF 3-5 COMPOUNDS AND THE MECHANISM OF FERMI LEVEL PINNING BY OXYGEN (PASSIVATION) AND METALS (SCHOTTKY BARRIERS) [J].

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LINDAU, I ;

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[8] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

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[9] SURFACE DEFECT EFFECTS ON SCHOTTKY BARRIERS [J].

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