OXYGEN AND TEMPERATURE INDUCED MODIFICATION ON GAAS CLEAVED SURFACES AND GAAS METAL SCHOTTKY DIODES

被引：5

作者：

ISMAIL, A

PALAU, JM

LASSABATERE, L

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1984年 / 19卷 / 03期

关键词：

D O I：

10.1051/rphysap:01984001903019700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：197 / 204

页数：8

共 48 条

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