ELECTRONIC-PROPERTIES OF GA/GAAS(110) UPON INTERFACE FORMATION

被引：27

作者：

BOLMONT, D

CHEN, P

SEBENNE, CA

机构：

来源：

SURFACE SCIENCE | 1982年 / 117卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90525-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：417 / 425

页数：9

共 19 条

[1] INTERFACE STATES AT GA-GAAS INTERFACE [J].

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BIANCONI, A .

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[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

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[3] SURFACE-REACTIONS AND INTERDIFFUSION [J].

BACHRACH, RZ ;

BAUER, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153

[4] ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111) [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22) :3313-3319

[5] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

PHYSICAL REVIEW B, 1981, 24 (08) :4552-4559

[6]

BOLMONT D, UNPUB

[7] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1978, 18 (04) :1800-1812

[8] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].

CHADI, DJ ;

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163

[9] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (10) :4724-4726

[10] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].

GUICHAR, GM ;

SEBENNE, CA ;

GARRY, GA .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161

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