共 19 条
[12]
HIGH-RESOLUTION PHOTOEMISSION YIELD AND SURFACE-STATES IN SEMICONDUCTORS
[J].
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS,
1977, 39 (02)
:768-780
[13]
SEBENNE CA, 1975, PHYS REV B, V21, P1380
[14]
BONDING OF AL AND GA TO GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980, 17 (01)
:511-516
[15]
INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979, 16 (05)
:1143-1148
[16]
COLUMN-III AND COLUMN-V ELEMENTS ON GAAS(110) - BONDING AND ADATOM-ADATOM INTERACTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980, 17 (05)
:874-879
[18]
CHEMISORPTION OF AL AND GA ON THE GAAS(110) SURFACE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980, 17 (05)
:869-873