INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110)

被引：89

作者：

SKEATH, P

LINDAU, I

CHYE, PW

SU, CY

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1143 / 1148

页数：6

共 33 条

[1] SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110)
AMITH, A
MARK, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1344 - 1352
[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[3] BACHRACH RZ, 1979, J VAC SCI TECHNOL, V16, P1195
[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[5] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[6] SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE
BROWN, FC
BACHRACH, RZ
LIEN, N
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01): : 73 - 79
[7] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[8] SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY
DONIACH, S
LINDAU, I
SPICER, WE
WINICK, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1123 - 1127
[9] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS
GARNER, CM
LINDAU, I
MILLER, JN
PIANETTA, P
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 372 - 375
[10] PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE
GREGORY, PE
SPICER, WE
[J]. PHYSICAL REVIEW B, 1976, 13 (02): : 725 - 738

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