EFFECTS OF LOW OXYGEN EXPOSURES ON THE ELECTRONIC SURFACE PROPERTIES OF GAAS (110)

被引：27

作者：

THUAULT, CD

GUICHAR, GM

SEBENNE, CA

机构：

[1] Laboratoire de Physique des Solides, associé au Centre National de la Recherche Scientifique, Université Pierre et Marie Curie, F-75005 Paris

来源：

SURFACE SCIENCE | 1979年 / 80卷 / 01期

关键词：

D O I：

10.1016/0039-6028(79)90687-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The first stages of oxygen adsorption, for exposures from 0.1 to 104 L on cleaved surfaces of n and p-type GaAs samples, are investigated by Photoemission Yield Spectroscopy. For any doping, the evolution of the density of states in the gap with oxygen exposures depends on the quality of the cleave. It is shown that, for good cleaves of the most highly doped n-type samples, an oxygen-induced band appears in the gap at exposures as low as 1 L. This effect is discussed, assuming changes in the initial structure of the clean surface. © 1979.

引用

页码：273 / 277

页数：5

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