HIGH-RESOLUTION PHOTOEMISSION YIELD AND SURFACE-STATES IN SEMICONDUCTORS

被引：92

作者：

SEBENNE, CA ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1007/BF02725822

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：768 / 780

页数：13

共 15 条

[1] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE [J].

CHIAROTTI, G ;

DELSIGNO.G ;

NANNARONE, S .

PHYSICAL REVIEW LETTERS, 1968, 21 (16) :1170-+

[2] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].

CHIAROTTI, G ;

NANNARONE, S ;

PASTORE, R ;

CHIARADIA, P .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+

[3] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[4]

GARRY G, THESIS U P M CURIE

[5]

GUICHAR G, 1976, 13 P INT C PHYS SEM, P710

[6] STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES [J].

GUICHAR, GM ;

SEBENNE, CA ;

GARRY, GA ;

BALKANSKI, M .

SURFACE SCIENCE, 1976, 58 (02) :374-378

[7] HYDROGEN ADSORPTION AND SURFACE-STRUCTURES OF SILICON [J].

IBACH, H ;

ROWE, JE .

SURFACE SCIENCE, 1974, 43 (02) :481-492

[8] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].

IBACH, H ;

HORN, K ;

DORN, R ;

LUTH, H .

SURFACE SCIENCE, 1973, 38 (02) :433-454

[9] DETERMINATION OF SURFACE STATES AT CLEAN, CLEAVED SILICON SURFACES FROM PHOTOCONDUCTIVITY [J].

MULLER, W ;

MONCH, W .

PHYSICAL REVIEW LETTERS, 1971, 27 (05) :250-&

[10] PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON [J].

ROWE, JE ;

CHRISTMAN, SB ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1975, 34 (14) :874-877

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