PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON

被引：93

作者：

ROWE, JE ^{[1
]}

CHRISTMAN, SB ^{[1
]}

IBACH, H ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 34卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.34.874

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：874 / 877

页数：4

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[1] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
[2] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
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[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[3] SURFACE STATE BAND ON GAAS (110) FACE
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[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 511 - 514
[4] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
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[J]. SURFACE SCIENCE, 1973, 36 (01) : 109 - 122
[5] LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES
HENZLER, M
[J]. SURFACE SCIENCE, 1970, 19 (01) : 159 - &
[6] TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING
HENZLER, M
[J]. SURFACE SCIENCE, 1970, 22 (01) : 12 - &
[7] HYDROGEN ADSORPTION AND SURFACE-STRUCTURES OF SILICON
IBACH, H
ROWE, JE
[J]. SURFACE SCIENCE, 1974, 43 (02) : 481 - 492
[8] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.
IBACH, H
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LUTH, H
[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454
[9] PHOTOEMISSION MEASUREMENT OF SURFACE STATES FOR ANNEALED SILICON
ROWE, JE
[J]. PHYSICS LETTERS A, 1974, A 46 (06) : 400 - 402
[10] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON
ROWE, JE
IBACH, H
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (08) : 421 - 424