STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES

被引：31

作者：

GUICHAR, GM ^{[1
]}

SEBENNE, CA ^{[1
]}

GARRY, GA ^{[1
]}

BALKANSKI, M ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75005 PARIS, FRANCE

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 02期

关键词：

D O I：

10.1016/0039-6028(76)90476-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：374 / 378

页数：5

共 12 条

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[2]

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[3]

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[8] PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON [J].

ROWE, JE ;

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IBACH, H .

PHYSICAL REVIEW LETTERS, 1975, 34 (14) :874-877

[9]

SCHLUTER M, TO BE PUBLISHED

[10] SURFACE STATES FROM PHOTOEMISSION THRESHOLD MEASUREMENTS ON A CLEAN, CLEAVED, SI(111) SURFACE [J].

SEBENNE, C ;

BOLMONT, D ;

GUICHAR, G ;

BALKANSKI, M .

PHYSICAL REVIEW B, 1975, 12 (08) :3280-3285

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