PHOTOEMISSION AND ENERGY-LOSS SPECTROSCOPY ON SEMICONDUCTOR SURFACES

被引：125

作者：

ROWE, JE

IBACH, H

FROITZHEIM, H

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] TH AACHEN,PHYS INST 2,AACHEN,FED REP GER

来源：

SURFACE SCIENCE | 1975年 / 48卷 / 01期

关键词：

D O I：

10.1016/0039-6028(75)90309-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：44 / 58

页数：15

相关论文

共 28 条

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES
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[4] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
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[6] FROITZHEIM H, TO BE PUBLISHED
[7] FOLDING AND NONFOLDING ELECTRON DISTRIBUTIONS IN ION-NEUTRALIZATION SPECTROSCOPY AND EVIDENCE FOR AN ELECTRONIC SUPERLATTICE AT SI(111)7 SURFACE
HAGSTRUM, HD
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[J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1592 - 1603
[8] ION-NEUTRALIZATION SPECTROSCOPY OF SOLIDS AND SOLID SURFACES
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[J]. PHYSICAL REVIEW, 1966, 150 (02): : 495 - +
[9] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY
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[J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1580 - 1591
[10] HAGSTRUM HD, TO BE PUBLISHED