CHEMISORPTION OF AL AND GA ON THE GAAS(110) SURFACE

被引：42

作者：

SWARTS, CA ^{[1
]}

BARTON, JJ ^{[1
]}

GODDARD, WA ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,HARRY G STEELE LAB APPL PHYS & ELECT ENGN,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：869 / 873

页数：5

共 24 条

[1] INTERFACE STATES AT GA-GAAS INTERFACE [J].

BACHRACH, RZ ;

BIANCONI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528

[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[3]

BACHRACH RZ, 1978, 14TH P INT C PHYS SE, P1073

[4] CHEMISORPTION OF OXYGEN AND ALUMINUM ON THE GAAS (110) SURFACE FROM ABINITIO THEORY [J].

BARTON, JJ ;

SWARTS, CA ;

GODDARD, WA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :164-168

[5]

BARTON JJ, 1979, THESIS CALIFORNIA I

[6] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[7] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1976, 20 (07) :641-644

[8] THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION [J].

GODDARD, WA ;

BARTON, JJ ;

REDONDO, A ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1274-1286

[9] STUDY OF SURFACES AND INTERFACES USING QUANTUM-CHEMISTRY TECHNIQUES [J].

GODDARD, WA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1308-1317

[10]

HUIJSER A, UNPUBLISHED

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