Enhancement of electron injection in organic light-emitting devices using an Ag/LiF cathode

被引：70

作者：

Wang, XJ ^{[1
]}

Zhao, JM ^{[1
]}

Zhou, YC ^{[1
]}

Wang, XZ ^{[1
]}

Zhang, ST ^{[1
]}

Zhan, YQ ^{[1
]}

Xu, Z ^{[1
]}

Ding, HJ ^{[1
]}

Zhong, GY ^{[1
]}

Shi, HZ ^{[1
]}

Xiong, ZH ^{[1
]}

Liu, Y ^{[1
]}

Wang, ZJ ^{[1
]}

Obbard, EG ^{[1
]}

Ding, XM ^{[1
]}

Huang, W ^{[1
]}

Hou, XY ^{[1
]}

机构：

[1] Fudan Univ, Inst Adv Mat, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 07期

关键词：

D O I：

10.1063/1.1655676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A LiF-buffered silver cathode has been used in organic light-emitting devices (OLEDs) with structure indium-tin-oxide/N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (50 nm)/Alq(3) (100 nm)/cathode. The efficiency of electron injection from the cathode is strongly dependent on the thickness of the LiF buffer layer. While a LiF layer thinner than 1.0 nm leads to higher turn-on voltage and decreased electroluminescent (EL) efficiency, a LiF layer of 3.0 nm significantly enhances the electron injection and results in lower turn-on voltage and increased EL efficiency. A brightness of 16 000 cd/m2 and EL efficiency of 4.8 cd/A can be achieved with an Ag/LiF cathode. This dependence of electron injection on the LiF thickness is quite different from that reported for OLEDs with a Al/LiF cathode, but can be well understood using the tunneling model. (C) 2004 American Institute of Physics.

引用

页码：3828 / 3830

页数：3

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