共 14 条
Enhancement of electron injection in organic light-emitting devices using an Ag/LiF cathode
被引:70
作者:
Wang, XJ
[1
]
Zhao, JM
[1
]
Zhou, YC
[1
]
Wang, XZ
[1
]
Zhang, ST
[1
]
Zhan, YQ
[1
]
Xu, Z
[1
]
Ding, HJ
[1
]
Zhong, GY
[1
]
Shi, HZ
[1
]
Xiong, ZH
[1
]
Liu, Y
[1
]
Wang, ZJ
[1
]
Obbard, EG
[1
]
Ding, XM
[1
]
Huang, W
[1
]
Hou, XY
[1
]
机构:
[1] Fudan Univ, Inst Adv Mat, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
关键词:
D O I:
10.1063/1.1655676
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
A LiF-buffered silver cathode has been used in organic light-emitting devices (OLEDs) with structure indium-tin-oxide/N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (50 nm)/Alq(3) (100 nm)/cathode. The efficiency of electron injection from the cathode is strongly dependent on the thickness of the LiF buffer layer. While a LiF layer thinner than 1.0 nm leads to higher turn-on voltage and decreased electroluminescent (EL) efficiency, a LiF layer of 3.0 nm significantly enhances the electron injection and results in lower turn-on voltage and increased EL efficiency. A brightness of 16 000 cd/m2 and EL efficiency of 4.8 cd/A can be achieved with an Ag/LiF cathode. This dependence of electron injection on the LiF thickness is quite different from that reported for OLEDs with a Al/LiF cathode, but can be well understood using the tunneling model. (C) 2004 American Institute of Physics.
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页码:3828 / 3830
页数:3
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